At the Flash Memory Summit conference which was held from11 – 13 August in California, the world’s top flash memory makers and innovators gathered to talk shop. Highlight of the three-day event was the exhibition by Samsung Ltd of an experimental server equipped with 48 solid State Drives (SSD) each of 16TB (One Terabyte = 1000 Gigabytes) capacity, giving the server a total of 768TB of ultra-fast solid state storage.
Until now the highest capacity conventional hard drives, for instance from Western Digital and Seagate, had 8 or 10TB. Samsung’s new 16TB SSD named PM1663a will have an actual formatted storage capacity of 15.36TB. Using 3-dimension (3D) Vertical NAND (V-NAND) technology, Samsung was able to pack 32GBof storage into a single die layer. In 2014, Samsung had boasted a 3-bit Multi-Level Cell (MLC) that reached 38 layers and now it is announcing the first V-NAND to sport 48 layers of 3-bit MLCs.
At the conference, Samsung also announced the creation of a new 48-layer 256GB TLC NAND flash chip, which will be 40 percent smaller, 30 percent more eco-friendly and thereby significantly reduce costs, than its predecessor which had 128Gb capacity.
However, it is the TCO-optimized, high-performance SSDs that will add to Samsung’s industry-leading portfolio of advanced enterprise and data-center SSDs. The new technological breakthrough will also the help the company in its all-out efforts to solidify its lead in the memory chip market, in the face of challenges posed by global chip makers, including Toshiba, SanDisk, Micro and Intel.